Published by Gbaf News
Posted on May 30, 2018
13 min readLast updated: January 21, 2026
Complete Product Line of Five Standard Modules in New Low Inductance Package to be Demonstrated in Hall 6, Booth 318 at PCIM Europe June 5-7
Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced its extremely low inductance package dedicated to high current, low specific on-resistance (RDSon) Silicon Carbide (SiC) MOSFET power modules. The new package, developed specifically for the company’s SP6LI product family, is designed to offer 2.9 nanohenry (nH) stray inductance suitable for SiC MOSFET technology and enable high current, high switching frequency as well as high efficiency. The SP6LI power modules in the new packaging, along with other SiC power modules from Microsemi’s existing product family, will be showcased June 5-7 in hall 6, booth 318 at PCIM Europe 2018, held at the Exhibition Centre in Nuremberg, Germany.
As Microsemi continues to expand its SiC solutions, it has become one of the few suppliers providing a range of Si/SiC power discrete and module solutions to the market. With one of the lowest stray inductance packages in the industry dedicated to high current SiC MOSFET power modules, Microsemi’s SP6LI product family features five standard modules, offering phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of modules in parallel to achieve complete systems, helping customers to further downsize their equipment.
Microsemi’s SP6LI power modules can be used in switch mode power supplies and motor control in a variety of industrial, automotive, medical, aerospace and defense applications. Examples include electric vehicle/hybrid electric vehicle (EV/HEV) powertrain and kinetic energy recovery systems (KERSs); aircraft actuation systems; power generation systems; switched mode power supplies for applications including induction heating, medical power supplies and electrification of trains; photovoltaic (PV)/solar/wind converters and uninterrupted power supply (UPS).
“Our extremely low stray inductance standard SP6LI package is ideal for improving the performance of SiC MOSFETs for high switching, high current and high efficiency applications, offering a smaller sized power systems solution which can help customers significantly reduce their equipment needs,” said Leon Gross, vice president and business unit manager for Microsemi’s Discrete and Power Management business unit. “These superior switching characteristics of our low inductance package enable customers to develop higher performance and highly reliable systems to help differentiate them from the competition.”
According to market research firm Technavio, the global SiC market for semiconductor applications is expected to reach nearly $540.5 million by 2021, growing at a compound annual growth rate (CAGR) of more than 18 percent. In addition, IHS Markit’s research indicates by 2025 SiC MOSFETs are forecast to generate revenue exceeding $300 million, almost reaching the levels of Schottky diodes to become the second best-selling SiC discrete power device type.
The SP6LI power modules from Microsemi feature a phase leg topology made of SiC power MOSFETs and SiC Schottky diodes, and offer an extremely low RDSon down to 2.1 mOhms per switch and an internal thermistor for temperature monitoring. They also offer screw-on terminals for both signal and power connections, as well as isolated and high thermal conductivity substrates (Aluminum Nitrate as a standard and Silicon Nitride as an option) for improved thermal performance. In addition, the standard copper base plate can be replaced as an option with Aluminum Silicon Carbide (AlSiC) material enabling higher power cycling capabilities.
Other key features include:
Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology;
Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch;
Each die in parallel with its own gate series resistor for homogenous current balancing;
High current capability up to 600 A at very fast switching frequency; and
Optional mix of assembly materials to better address different markets and applications.
Demonstrations at PCIM June 5-7 in Hall 6, Booth 318
Microsemi’s product experts will be at the company’s booth at PCIM during show hours to showcase its next-generation SiC solutions, including its new low inductance SiC-based SP6LI power module. In addition, the company’s recently announced next-generation 1200 V, 40 mOhm SiC MOSFET device and 1200V, 10/30/50A SiC diode product will be showcased along with a power factor correction (PFC) reference design. For more information or to request a meeting at the show, visit https://www.microsemi.com/details/346-pcim-europe.
Product Availability
The SP6LI product family is sampling now with the low inductance package. For more information, visit https://www.microsemi.com/product-directory/silicon-carbide-sic/4995-sic-power-modules or contact sales.support@microsemi.com.
About Microsemi
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www.microsemi.com.
Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.
“Safe Harbor” Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to its extremely low inductance package dedicated to high current, low specific on-resistance (RDSon) Silicon Carbide (SiC) MOSFET power modules, and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company’s products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs in implementing the company’s acquisitions and divestitures strategy or integrating acquired companies, uncertainty as to the future profitability of acquired businesses and realization of accretion from acquisition transactions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company’s most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi’s future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.
Complete Product Line of Five Standard Modules in New Low Inductance Package to be Demonstrated in Hall 6, Booth 318 at PCIM Europe June 5-7
Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced its extremely low inductance package dedicated to high current, low specific on-resistance (RDSon) Silicon Carbide (SiC) MOSFET power modules. The new package, developed specifically for the company’s SP6LI product family, is designed to offer 2.9 nanohenry (nH) stray inductance suitable for SiC MOSFET technology and enable high current, high switching frequency as well as high efficiency. The SP6LI power modules in the new packaging, along with other SiC power modules from Microsemi’s existing product family, will be showcased June 5-7 in hall 6, booth 318 at PCIM Europe 2018, held at the Exhibition Centre in Nuremberg, Germany.
As Microsemi continues to expand its SiC solutions, it has become one of the few suppliers providing a range of Si/SiC power discrete and module solutions to the market. With one of the lowest stray inductance packages in the industry dedicated to high current SiC MOSFET power modules, Microsemi’s SP6LI product family features five standard modules, offering phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of modules in parallel to achieve complete systems, helping customers to further downsize their equipment.
Microsemi’s SP6LI power modules can be used in switch mode power supplies and motor control in a variety of industrial, automotive, medical, aerospace and defense applications. Examples include electric vehicle/hybrid electric vehicle (EV/HEV) powertrain and kinetic energy recovery systems (KERSs); aircraft actuation systems; power generation systems; switched mode power supplies for applications including induction heating, medical power supplies and electrification of trains; photovoltaic (PV)/solar/wind converters and uninterrupted power supply (UPS).
“Our extremely low stray inductance standard SP6LI package is ideal for improving the performance of SiC MOSFETs for high switching, high current and high efficiency applications, offering a smaller sized power systems solution which can help customers significantly reduce their equipment needs,” said Leon Gross, vice president and business unit manager for Microsemi’s Discrete and Power Management business unit. “These superior switching characteristics of our low inductance package enable customers to develop higher performance and highly reliable systems to help differentiate them from the competition.”
According to market research firm Technavio, the global SiC market for semiconductor applications is expected to reach nearly $540.5 million by 2021, growing at a compound annual growth rate (CAGR) of more than 18 percent. In addition, IHS Markit’s research indicates by 2025 SiC MOSFETs are forecast to generate revenue exceeding $300 million, almost reaching the levels of Schottky diodes to become the second best-selling SiC discrete power device type.
The SP6LI power modules from Microsemi feature a phase leg topology made of SiC power MOSFETs and SiC Schottky diodes, and offer an extremely low RDSon down to 2.1 mOhms per switch and an internal thermistor for temperature monitoring. They also offer screw-on terminals for both signal and power connections, as well as isolated and high thermal conductivity substrates (Aluminum Nitrate as a standard and Silicon Nitride as an option) for improved thermal performance. In addition, the standard copper base plate can be replaced as an option with Aluminum Silicon Carbide (AlSiC) material enabling higher power cycling capabilities.
Other key features include:
Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology;
Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch;
Each die in parallel with its own gate series resistor for homogenous current balancing;
High current capability up to 600 A at very fast switching frequency; and
Optional mix of assembly materials to better address different markets and applications.
Demonstrations at PCIM June 5-7 in Hall 6, Booth 318
Microsemi’s product experts will be at the company’s booth at PCIM during show hours to showcase its next-generation SiC solutions, including its new low inductance SiC-based SP6LI power module. In addition, the company’s recently announced next-generation 1200 V, 40 mOhm SiC MOSFET device and 1200V, 10/30/50A SiC diode product will be showcased along with a power factor correction (PFC) reference design. For more information or to request a meeting at the show, visit https://www.microsemi.com/details/346-pcim-europe.
Product Availability
The SP6LI product family is sampling now with the low inductance package. For more information, visit https://www.microsemi.com/product-directory/silicon-carbide-sic/4995-sic-power-modules or contact sales.support@microsemi.com.
About Microsemi
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world’s standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www.microsemi.com.
Microsemi and the Microsemi logo are registered trademarks or service marks of Microsemi Corporation and/or its affiliates. Third-party trademarks and service marks mentioned herein are the property of their respective owners.
“Safe Harbor” Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to its extremely low inductance package dedicated to high current, low specific on-resistance (RDSon) Silicon Carbide (SiC) MOSFET power modules, and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company’s products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs in implementing the company’s acquisitions and divestitures strategy or integrating acquired companies, uncertainty as to the future profitability of acquired businesses and realization of accretion from acquisition transactions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company’s most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi’s future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.
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