“Indium Gallium Arsenide (InGaAs) Market Sees Robust Growth Fueled by Demand for High-Speed Communication and Data Transmission Solutions”, States Fact.MR

The Indium Gallium Arsenide Market is anticipated to grow at a compound annual growth rate (CAGR) of 7.2% from 2024 to 2034, from a projected valuation of US$ 1,288.9 million in 2024 to US$ 2,583.2 million by 2034.

The growing demand for high-speed communication and data transmission, especially in the fields of telecommunication, defense, and aerospace, acts as a driving force towards the growth in the InGaAs market. InGaAs has superior electron mobility, sensitivity to NIR and SWIR wavelengths, and high radiation tolerance, hence ideal for high-frequency and high-bandwidth applications. Besides, InGaAs is also present in the photodetectors, optical fibers, and laser diodes used in 5G infrastructure, fiber optics, and satellite communication.

Recent market trends indicate that firms are into strategic partnerships and acquisitions for capacity building in order to integrate high-end technologies. High production costs and restricted availability of raw material act as limiting factors for wider adoption.

The U.S. and China are considered as the most dynamic growth regions due to developing telecommunications and defense. The PIN photodiode is used largely due to its fit with high-speed optical communication and cost-effectiveness.

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Leading Players Driving Innovation in the Indium Gallium Arsenide (InGaAs) Market:

The key players in the infant indium gallium arsenide (InGaAs) industry include AXT, Inc.; Broadcom, Inc; Epistar Corporation; Excelitas Technologies Corporation; First Sensor AG; Hamamatsu Photonics K.K.; Horiba Scientific; II-VI Incorporated; IntelliEPI Inc.; IQE plc; Jenoptik AG; Laser Components; Macom Technology Solutions; Marktech Optoelectronics Inc.; Nichia Corporation; OSI Optoelectronics; RS Component; University Wafer Inc.; Sensors Unlimited; Sumitomo Electric Industries, Ltd.; Synopsys, Inc.; Teledyne Technologies; Visual Photonics Epitaxy Co., Ltd. (VPEC); Xenics NV; other prominent players.

Indium Gallium Arsenide (InGaAs) Market News & Trends:

AXT, Inc., Broadcom, Inc., Epistar Corporation, Excelitas Technologies Corporation, First Sensor AG, Hamamatsu Photonics K.K., Horiba Scientific, II-VI Incorporated, IntelliEPI Inc., IQE plc, Jenoptik AG, Laser Components, Macom Technology Solutions, Marktech Optoelectronics Inc., Nichia Corporation, OSI Optoelectronics, RS Component, University Wafer Inc., Sensors Unlimited, Sumitomo Electric Industries, Ltd., Synopsys, Inc., Teledyne Technologies, Visual Photonics Epitaxy Co., Ltd. (VPEC), Xenics NV, and Other Notable Players

A significant emphasis on improving chip sensitivity and performance for applications such as LiDAR and optical communications is evident in recent advances in the indium gallium arsenide (InGaAs) market. In order to incorporate cutting-edge technologies and optimize supply chains, businesses are actively seeking strategic alliances and acquisitions.

By fostering innovation, this partnership makes it possible to develop next-generation photodetectors and expand production capabilities, both of which are critical for satisfying the rising demand across a range of industries, including telecommunications and the automotive sector. As an example

In March 2024, Phlux Technology delivered their 1550nm indium gallium arsenide avalanche photodiodes, securing a major export agreement. For customers in North America and Europe in particular, these "Noiseless InGaAs APDs," which are renowned for being 12 times more sensitive than the competition, offer instant performance improvements in systems like LiDAR and optical-fiber equipment. Soon after a successful initial fundraising round, the company promptly supplied items to 15 clients.

The acquisition of OptoGration Inc., a strategic partner that has been instrumental in the design of Luminar Technologies Inc.'s indium gallium arsenide semiconductors, was announced in July 2021. The agreement increases the integration of chip-design resources already under Luminar's purview while bringing supply-chain components under its control. Its fifth-generation Iris LiDAR sensor is being constructed using these parts. The two businesses have been collaborating on the development of high-performance InGaAs photodetector technology, which is essential for 1550nm-wavelength LiDAR applications, for the past five years. The OptoGration plant, which can produce up to 1 million units annually and is expandable up to 10 million, will be used to create the InGaAs chips.

Key Takeaways from the Indium Gallium Arsenide (InGaAs) Market Study:

• During 2024-2034, the market will expand with a CAGR of 7.2%. Among regions, East Asia exhibits the fastest growth with a CAGR of 7.9%
• PIN photodiodes hold about 42.8% of the share in the product type segment. In the end-use industry, telecommunications hold about 32.2% of the market in 2024.
• The global indium gallium arsenide market growth was about 5.6% during the historic period (2019-2023).

“The InGaAs Market is Poised for Robust Growth, driven by Increasing Demand for High-Speed Communication and Advancements in 5g, Defense, and Optical Technologies,” says Fact.MR analyst.

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Market Growth Stratagems:

Recent developments indicate a strong growth trajectory in the indium gallium arsenide (InGaAs) market, driven by advancements in optoelectronic device production and increasing demand for high-performance applications. The launch of sensitive avalanche photodiodes enhances capabilities in LiDAR and optical-fiber systems, while strategic partnerships boost manufacturing efficiency and product integration. For Instance,

• In October 2022, AIXTRON SE received an order from Furukawa FITEL Optical Device Co., Ltd. in Japan for its AIX 2800G4 MOCVD system to support the development and production of optoelectronic devices based on GaAs and InP. The equipment is valued for its superior epitaxial layer uniformity and high-volume manufacturing efficiency.

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