Published by Coherent Market Insights
Posted on October 8, 2021
3 min readLast updated: January 30, 2026
The EUV Lithography Market is set to grow significantly by 2028, driven by advancements in semiconductor manufacturing, despite challenges like high costs.
United States/WA: Extreme Ultraviolet (EUV) Lithography Market is expected to be valued at US$ 29,648.4 million by 2028, exhibiting a CAGR of 26.1% during the forecast period (2021-2028)
Report Pages:[180 Pages]
Market Competitive Landscape:-
Major layers operating in the Global Extreme Ultraviolet (EUV) Lithography Market are: Canon Inc., Samsung Electronics Co. Ltd, Toppan Photomasks Inc., Ushio, Inc., ASML Holding NV, NTT Advanced Technology Corporation, Nikon Corporation, Intel Corporation, and Taiwan Semiconductor Manufacturing Company Limited.
Extreme ultraviolet lithography (also known as EUV or EUVL) is a lithography (mainly chip printing/making aka “fabricating”) technology using a range of extreme ultraviolet (EUV) wavelengths, roughly spanning a 2% FWHM bandwidth about 13.5 nm. The tool consists of a laser-driven tin (Sn) plasma light source, reflective optics comprising multilayer mirrors, contained within a hydrogen gas ambient. The hydrogen is used for keeping the EUV collector mirror in the source free of Sn deposition.EUV (Extreme Ultraviolet) lithography uses a EUV light of the extremely short wavelength of 13.5 nm.
It allows exposure of fine circuit patterns with a half-pitch below 20 nm that cannot be exposed by the conventional optical lithography using an ArF excimer laser.1) Putting it into practical use requires a variety of element technologies, including the light source, optics, masks, photoresist, and lithography tools. EUV lithography is a projection lithography approach that utilizes 13.5 nm photons to expose photoresist. a schematic of a EUV lithography exposure system. Before describing the key sub-systems, some general observations are in order. First, since 13.5 nm is in the soft X-ray band, all materials absorb EUV photons strongly, meaning it is not possible to use refractive optics nor is it possible to transmit these photons through air. Second, the reflectivity of essentially all single materials at normal incidence is very small. EUV was originally slated to be introduced at the 45/40nm process node, but problems with the power source to achieve sufficient throughput have forced multiple delays. It was considered a critical component at 16/14nm as a way of avoiding double patterning using 193nm immersion. EUV systems began shipping for 7nm processes.
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However, high prices of extreme ultraviolet (EUV) lithography systems and limited acceptance of technology are the factors that may hamper the growth of global extreme ultraviolet (EUV) lithography market growth during the forecast period.
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The post Extreme Ultraviolet (EUV) Lithography Market Deep Research, Global Opportunity and Advance Technology by 2021-2027 appeared first on Gatorledger.
The article focuses on the growth and opportunities in the Extreme Ultraviolet (EUV) Lithography Market from 2021 to 2027.
High costs of EUV systems and limited technology acceptance are major challenges.
Key players include Canon Inc., Samsung Electronics, and ASML Holding NV.
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