Epitaxial Wafer Market Technology Advancement, Regional Opportunity and Brief Overview of Industry
Published by Coherent Market Insights
Posted on October 7, 2021

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Published by Coherent Market Insights
Posted on October 7, 2021

United States/WA: The global epitaxial wafer market is estimated to exhibit a CAGR of 12.4% over the forecast period
Report Pages:[133 Pages]
Market Competitive Landscape:-
Major layers operating in the Global Epitaxial Wafer Market are: EpiWorks Inc., Global Wafers Japan Co. Ltd., Nichia Corporation, SHOWA DENKO K.K., Siltronic AG, Desert Silicon Inc., Electronics and Materials Corporation Ltd. Intelligent Epitaxy Technology Inc.IQE plc. , Jenoptic AG, MOSPEC Semiconductor Corporation, Norstel AB, Ommic S.A., Silicon Valley Microelectronics Inc. ,SVT Associates Inc. Universal Wafer Inc., Wafer Works Corporation, Xiamen Powerway Advanced Materials Co. Ltd., and Visual Photonics Epitaxy Co. Ltd.
An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. The epi layer may be the same material as the substrate, typically monocrystalline silicon, or it may be a more exotic material with specific desirable qualities. The epitaxial layers may consist of compounds with particular desirable features such as gallium nitride (GaN), gallium arsenide (GaAs), or some combination of the elements gallium, indium, aluminum, nitrogen, phosphorus or arsenic.
Epitaxy is a process in which an additional monocrystalline silicon layer is deposited on to the polished crystal surface of a silicon wafer. This process makes it possible to select the material properties independently of the polished substrate, and consequently to create wafers that have different properties in the substrate and the epitaxial layer. In many cases this is necessary for the semiconductor component’s function.
Epitaxial layers are doped in situ during the growth of the layer. The dopants used for epi are usually As or P, for n-type epi layers, and B for p-type epi. The gas-phase species for these dopants are AsH3, PH3, B2H6, or, much less commonly, BCl3. The hydride doping species are typically purchased in high-pressure gas cylinders containing 10–100 ppm of the hydride in H2. However, if exceptionally high concentrations of doping are necessary in the epi layer, these dopants can be purchased as pure components, although concentrations in the range of 1%–10% diluted with H2 or an inert gas are more common.
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The post Epitaxial Wafer Market Technology Advancement, Regional Opportunity and Brief Overview of Industry appeared first on Gatorledger.
United States/WA: The global epitaxial wafer market is estimated to exhibit a CAGR of 12.4% over the forecast period
Report Pages:[133 Pages]
Market Competitive Landscape:-
Major layers operating in the Global Epitaxial Wafer Market are: EpiWorks Inc., Global Wafers Japan Co. Ltd., Nichia Corporation, SHOWA DENKO K.K., Siltronic AG, Desert Silicon Inc., Electronics and Materials Corporation Ltd. Intelligent Epitaxy Technology Inc.IQE plc. , Jenoptic AG, MOSPEC Semiconductor Corporation, Norstel AB, Ommic S.A., Silicon Valley Microelectronics Inc. ,SVT Associates Inc. Universal Wafer Inc., Wafer Works Corporation, Xiamen Powerway Advanced Materials Co. Ltd., and Visual Photonics Epitaxy Co. Ltd.
An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. The epi layer may be the same material as the substrate, typically monocrystalline silicon, or it may be a more exotic material with specific desirable qualities. The epitaxial layers may consist of compounds with particular desirable features such as gallium nitride (GaN), gallium arsenide (GaAs), or some combination of the elements gallium, indium, aluminum, nitrogen, phosphorus or arsenic.
Epitaxy is a process in which an additional monocrystalline silicon layer is deposited on to the polished crystal surface of a silicon wafer. This process makes it possible to select the material properties independently of the polished substrate, and consequently to create wafers that have different properties in the substrate and the epitaxial layer. In many cases this is necessary for the semiconductor component’s function.
Epitaxial layers are doped in situ during the growth of the layer. The dopants used for epi are usually As or P, for n-type epi layers, and B for p-type epi. The gas-phase species for these dopants are AsH3, PH3, B2H6, or, much less commonly, BCl3. The hydride doping species are typically purchased in high-pressure gas cylinders containing 10–100 ppm of the hydride in H2. However, if exceptionally high concentrations of doping are necessary in the epi layer, these dopants can be purchased as pure components, although concentrations in the range of 1%–10% diluted with H2 or an inert gas are more common.
Get Sample Report + All Related Info (with COVID 19 Impact Analysis):
https://www.coherentmarketinsights.com/insight/request-sample/2277
Coherent Market Insights is celebrating its 5th Anniversary and offering a Flat 2000 USD DISCOUNT. The offer is valid for all CMI reports. Let’s celebrate with us.
Detailed Segmentation:
Go Through Our Trusted Clients List: https://www.coherentmarketinsights.com/trusted-by
People Also Search For Following Reports:
Contact Us:
Mr. Shah
Coherent Market Insights
1001 4th Ave,
#3200
Seattle, WA 98154
Tel: +1-206-701-6702
Email: sales@coherentmarketinsights.com
The post Epitaxial Wafer Market Technology Advancement, Regional Opportunity and Brief Overview of Industry appeared first on Gatorledger.