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3D IC Market Projected to Grow at 8.8% CAGR to $28.16 Billion by 2034
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3D integrated circuits have less power consumption compared to 2D ICs with improved functionality and faster speeds, thus improving their sales, says FactMR.
3D integrated circuits have less power consumption compared to 2D ICs with improved functionality and faster speeds, thus improving their sales, says FactMR.
Fact.MR, a market research and competitive intelligence provider, through its newly published market analysis, reveals that revenue from the global 3D IC market is projected to reach US$ 12.12 billion in 2024. The market has been forecasted to reach a value of US$ 28.16 billion by the end of 2034, expanding at a CAGR of 8.8% over the next ten years.
In power consumptions comparable to 2D ICs, 3D integrated circuits provide improved functionality, faster speeds, and smaller physical footprints. One of the main factors driving the growth of the 3D IC market is the widespread use of 3D integrated circuits, such as those found in the automotive, aerospace, communications, and telecommunications industries.
The market for small, powerful electronics that consumers choose to purchase and the widespread use of modern technology are the main drivers of the growth in the 3D integrated circuits (IC) market. The market has expanded dramatically as more people start utilizing 3D ICs in gadgets such as smartphones, tablets, and other electronics. The main goal of the market for 3D integrated circuits is to improve the functionality and power efficiency of electronic devices by stacking multiple layers of integrated circuits on top of one another.
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Key Takeaways from the Market Study:
“Leading chip makers based in the United States are focused on creating new technologies. The country’s main focus is on research and development related to 3D integrated circuits,” says a Fact.MR analyst.
3D IC Technology Enables Stacking of Multiple Layers of Integrated Circuits
The global 3D integrated circuit market is largely being driven by the growing need for fast and small electronics. The ability to stack multiple layers of integrated circuits is made possible by 3D IC technology, which is becoming more and more popular with the rise in popularity of smaller, lighter, and more powerful devices, such as wearables, tablets, and smartphones. Through this process, products become smaller, more efficient and require less power. When consumers buy gadgets, it supports their changing needs.
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More Valuable Insights on Offer
Fact.MR, in its new offering, presents an unbiased analysis of the 3D IC market for 2019 to 2023 and forecast statistics for 2024 to 2034.
The study divulges the 3D ICs market based on substrate (silicon on insulator, bulk silicon), by 3D technology (wafer level packaging, system integration), by application (consumer electronics, ICT/telecommunication, military, automotive, biomedical), by component (through silicon vias, through glass vias, silicon interposer), product (sensors, memories, logics, light emitting diodes, micro electro-mechanical systems), across seven major regions of the world (North America, Latin America, Western Europe, Eastern Europe, East Asia, South Asia & Pacific, and MEA).
Key Companies Profiled:
3M Company; Mediatek; STMicroelectronics; Advanced Semiconductor Engineering; Samsung Electronics; IBM; Taiwan Semiconductor Manufacturing; Xilinx; Taiwan Semiconductor Manufacturing Company Ltd; Micron Technology; STATS ChipPAC; United Microelectronics Corporation; ASE GROUP; INTEL CORPORATION.
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A 3D integrated circuit (IC) is a type of semiconductor device that combines multiple layers of integrated circuits into a single package, enhancing performance and reducing power consumption.
CAGR stands for Compound Annual Growth Rate. It is a useful measure that describes the mean annual growth rate of an investment over a specified time period, assuming the investment grows at a steady rate.
Silicon on insulators (SOI) is a technology used in semiconductor manufacturing that improves performance and reduces power consumption by using a layer of insulating material beneath the silicon.
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