Toshiba Memory Corporation, the world leader in memory solutions, today announced the launch of a new Storage Class Memory (SCM) solution: XL-FLASHTM. Based on the companys innovative BiCS FLASHTM 3D flash memory technology with 1bit-per-cell SLC, XL-FLASHTM brings low latency and high performance to data center and enterprise storage. Sample shipments will start in September, with mass production expected to begin in 2020.
Classified as SCM (or persistent memory), with the ability to retain its contents like NAND flash memory, XL-FLASHTM bridges the performance gap that exists between DRAM and NAND. While volatile memory solutions such as DRAM provide the access speed needed by demanding applications, that performance comes at a high cost. As the cost-per-bit and scalability of DRAM levels off, this new SCM (or persistent memory) layer in the memory hierarchy addresses that issue with a high density, cost effective, non-volatile NAND flash memory solution.
Sitting in between DRAM and NAND flash, XL-FLASHTM brings increased speed, reduced latency and higher storage capacities “ at a lower cost than traditional DRAM. XL-FLASHTM will initially be deployed in an SSD format but could be expanded to memory channel attached devices that sit on the DRAM bus, such as future industry standard non-volatile dual in-line memory modules (NVDIMMs).
- 128 gigabit (Gb) die (in a 2-die, 4-die, 8-die package)
- 4KB page size for more efficient operating system reads and writes
- 16-plane architecture for more efficient parallelism
- Fast page read and program times. XL-FLASHTM provides a low read latency of less than 5 microseconds, approximately 10 times faster than existing TLC
As the inventor of NAND flash, the first to announce 3D flash memory technology and a leader in process migrations, Toshiba Memory is ideally positioned to deliver SLC-based SCM with mature manufacturing, proven scalability and time-tested SLC reliability.
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In every mention of a Toshiba Memory product: Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1GB = 2^30 bytes = 1,073,741,824 bytes. The definition of 1KB = 2^10 bytes = 1,024 bytes.
About Toshiba Memory
Toshiba Memory Group, a world leader in memory solutions, is dedicated to the development, production and sale of flash memory and solid state drives (SSDs). In April 2017, Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Toshiba Memory pioneers cutting-edge memory solutions and services that enrich people’s lives and expand society’s horizons. The company’s innovative 3D flash memory technology, BiCS FLASHTM, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, SSDs, automotive and data centers. Toshiba Memory will officially change its name to Kioxia on October 1, 2019. For more information on Toshiba Memory, please visit https://business.toshiba-memory.com/en-jp/.
Toshiba Memory Holding Corporation
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